Comparison of structural and optical properties of InAs quantum dots grown by migration-enhanced molecular-beam epitaxy and conventional molecular-beam epitaxy

Abstract

We strongly support Guryanov’s speculation—that a thinner wetting layer is expected with quantum dots (QDs) grown by migration-enhanced epitaxy—with structural and optical measurements. InAs QDs grown by migration-enhanced molecular-beam epitaxy showed a larger size, lower density, ∼40% enhanced uniformity, ∼2 times larger aspect ratio, and a measurement temperature insensitivity of the photoluminescence linewidth compared to QDs grown by conventional molecular-beam epitaxy. The thickness of the wetting layer for the migration-enhanced epitaxial InAs QD (2.1nm) was thinner than that of the counterpart (4.0nm).