In Situ Observation on Melt Growth Process of Tin Crystal by Means of Synchrotron X-Ray Topography

Osamu Nittono, Taro Ogawa, Sheng Kai Gong, Sigemaro Nagakura

Japanese Journal of Applied Physics · 1984 · 21 citations · 1 references

Concepts

Abstract

Melting and growth processes of a thin Sn crystal with low dislocation density have been investigated using synchrotron radiation and a TV imaging system. When the melting rate is less than 2.7 mm/min, the melting interface follows a circular equal-melting point interface and appears to be homogeneously smooth. No facet growth is seen at a growth rate of 2.3 mm/min. Most of the dislocations do not propagate into a newly grown crystal and the homogeneous solidification results in a nearly perfect crystal. Dislocations and slip bands were found to generate from a part where the solidification was completed.

References

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