Publication | Closed Access
Galvanomagnetic Phenomena in High Electric Fields
36
Citations
9
References
1963
Year
Categoryquantum ElectronicsEngineeringMagnetic ResonanceSemiconductor DeviceSemiconductorsMagnetismGalvanomagnetic PhenomenaQuantum MaterialsElectric FieldSemiconductor TechnologyPhysicsMany-valley SemiconductorSemiconductor MaterialSolid-state PhysicApplied PhysicsCondensed Matter PhysicsMagnetic PropertyMagnetic FieldAcoustical Phonon Scattering
The Hall coefficient in a many-valley semiconductor is calculated for high electric fields and is shown to be independent of the electric field. For silicon we find $\frac{{R}_{100}}{{R}_{111}}=0.9$ and $\frac{{R}_{110}}{{R}_{111}}=0.85$, where ${R}_{100}$ is the Hall coefficient for the current in the [100] direction, etc. For germanium we find $\frac{{R}_{111}}{{R}_{100}}=0.68$. Distribution functions for hot electrons in high magnetic fields are calculated at high and low temperatures for acoustical phonon scattering.
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