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Epitaxially Grown Al Electrodes for High-Power Surface Acoustic Wave Devices
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1992
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Materials EngineeringMaterials ScienceElectrical EngineeringEpitaxial Al FilmSurface Acoustic WaveEngineeringAluminium NitrideAcoustic MetamaterialSurface ScienceApplied PhysicsAl ElectrodesGrown Al ElectrodesThin Film Process TechnologyThin FilmsAcoustic Wave DevicesChemical DepositionChemical Vapor Deposition
A deposition process of epitaxial Al film on a quartz substrate was studied to obtain Al electrodes of surface acoustic wave (SAW) devices having high resistance to stress migration. A vapor deposition system was used under relatively moderate deposition conditions: (1) pressure range of 10 -5 Pa; (2) deposition temperature of 150°C; (3) deposition rate in the range of 120∼240 nm/min. The growth mode of epitaxial Al film differed from that of polycrystalline Al film on quartz.