Free-Standing Single-Crystal NiSi₂ Nanowires with Excellent Electrical Transport and Field Emission Properties

Abstract

Free-standing single-crystal NiSi2 nanowires (NWs) were synthesized on Ni foil with a simple vapor transport method. The growth of previously elusive Si-rich silicide NWs was achieved with the addition of NiCl2 powders in front of the Ni substrate upstream. The presence of NiCl2 gas enhanced the condensation of Si and suppressed the supply of Ni atoms in the subsequent reactions. As the NWs maintain low resistivity, can carry very high currents, and possess excellent field emission properties, the growth of NiSi2 NWs shall lead to significant advantages in the fabrication of Si nanodevices.