Light‐induced degradation in indium‐doped silicon

Abstract

Abstract Light‐induced degradation of charge carrier lifetime was observed in indium‐doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light‐induced degradation in boron‐doped samples. Differences between defect formation in boron‐ and indium‐doped silicon are detected and discussed. A new model based on an acceptor self‐interstitial A Si –Si i defect is proposed and established with experimental findings and existing ab‐initio simulations. magnified image Charge carrier lifetime degradation during light soaking of indium‐doped samples with different oxygen concentrations. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)