Diffusion length of moles in <i>n</i>-InP

Abstract

By measuring the photocurrent as a function of reverse bias for InP photodiodes with a range of junction depths, the hole diffusion length Lp of epitaxial n-type InP (n∼1.5×1016 cm−3) was determined to be approximately 12 μm. This value of Lp is an order of magnitude larger than that determined by the electron beam induced current and surface photovoltage techniques. Reasons for these discrepancies, which involve geometrical and material considerations, respectively, are discussed.