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Thermoelectric properties of individual electrodeposited bismuth telluride nanowires
215
Citations
14
References
2005
Year
Bismuth Telluride NanowiresEngineeringThermoelectricsThermal ConductivityElectrodeposited Bismuth TellurideSemiconductorsNanoengineeringThermal ConductionPhonon-boundary ScatteringMaterials ScienceElectrical EngineeringNanotechnologyThermal TransportPhonon-phonon Umklapp ScatteringElectronic MaterialsNanomaterialsApplied PhysicsThermoelectric MaterialThermal Property
For an electrodeposited bismuth telluride (BixTe1−x) nanowire from one batch with x found to be about 0.46, the Seebeck coefficient (S) was measured to be 15%–60% larger than the bulk values at temperature 300K. For four other nanowires from a different batch with x≈0.54, S was much smaller than the bulk values. The electrical conductivity of the nanowires showed unusually weak temperature dependence and the values at 300K were close to the bulk values. Below 300K, phonon-boundary scattering dominated phonon-phonon Umklapp scattering in the nanowires, reducing the lattice thermal conductivity.
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