Ferroelectric negative capacitance hetero-tunnel field-effect-transistors with internal voltage amplification

Abstract

The ferroelectric negative capacitance (NC) hetero-tunnel FET is fabricated for the first time, demonstrating the significant improvement in subthreshold swing (~double slope) and peak g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> (118% enhancement) due to the internal voltage amplification. The peak g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> enhancement at small V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> (-0.1V) indicates the intrinsic benefit by NC without lateral bias. The concept of coupling the ferroelectric polarization is proposed and synergistically contributes to the performance in future applications of steep subthreshold slope devices.