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Core-Level Binding-Energy Shifts Due to Reconstruction on the Si(111) 2 × 1 Surface
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References
1980
Year
Materials ScienceHigh-resolution Photoemission SpectraSurface CharacterizationEngineeringPhysicsObserved ShiftsNatural SciencesSurface ScienceApplied PhysicsCondensed Matter PhysicsSurface AnalysisAdditional Core-level StructuresSiliceneChemistrySilicon On InsulatorSurface Reconstruction
High-resolution photoemission spectra of the Si $2p$ level for freshly cleaved Si(111) reveal two additional core-level structures which are shifted relative to the bulk. The observed shifts are 0.59\ifmmode\pm\else\textpm\fi{}0.04 eV to lower and 0.3\ifmmode\pm\else\textpm\fi{}0.03 eV to higher binding energy, respectively. These shifted peaks, which vanish with increasing contamination of the surface, are shown to be directly correlated with reconstruction on the Si(111) 2\ifmmode\times\else\texttimes\fi{}1 surface.
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