High Speed 1.55 μm InAs/InGaAlAs/InP Quantum Dot Lasers

Abstract

We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 μm. The gain section was optimized for a high speed operation using a unique spatially resolved model. The measured modulation capability dependence on structural parameters (barrier width and the number of QD layers) is consistent with the model predictions. Short cavity lasers with a modal gain of more than 10 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> per dot layer exhibit a small signal modulation bandwidth above 9 GHz and large signal modulation at up to 22 Gb/s with an on/off ratio of 3 dB.