The study of lattice defects by channelling

Abstract

The channelling of ions in crystals is described and its application to the study of a variety of lattice defects is outlined. Ions which are channelled along different crystallographic axes and planes interact with displaced atoms in distinctive ways, enabling the atomistic nature of lattice defects to be determined. Three main areas of study are considered. (a) The trapping of vacancies and self-interstitials by solute atoms and the identification of the resulting trapping configurations. (b) The displacement of host atoms from lattice sites (e.g. ion-induced amorphisation of semiconductors). (c) The relaxation and reconstruction of surfaces.