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Tungsten nanowires and their field electron emission properties
159
Citations
23
References
2002
Year
NanosheetEngineeringTungsten NanowiresStraight NanowiresSemiconductor NanostructuresElectronic DevicesNanoengineeringNanoelectronicsMaterials FabricationNanostructure SynthesisNanoscale ScienceMaterials ScienceNanotechnologyNanomanufacturingObtained NanowiresElectronic MaterialsNanomaterialsApplied PhysicsNanofabrication
We report the fabrication of tungsten nanowires, by simple thermal treatment of W films, that behave as self-catalytic layers and their excellent electron field emission properties as well. The obtained nanowires have a diameter ranging from 10 to 50 nm, showing perfect straightness and neat appearance. Typical turn-on field for the electron emission is about 5 V/μm, and the field enhancement factor β becomes 38 256, which is very close to that of the high efficient single-wall carbon nanotube emitters. The most exciting result is the possibility of easy fabrication of perfectly straight nanowires as promising building blocks for terabit-level interconnection and nanomachine components without the intentional use of any heterogeneous catalysts.
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