Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser

Abstract

We present a two-color (956 and 985 nm) InGaAs/AlGaAs laser structure epitaxially stacked through a low-resistance (10−5–10−4 Ω cm2) Esaki junction, exhibiting two threshold characteristics. It is shown that this structure can be considered as a bipolar cascade laser.