50 nm Hall Sensors for Room Temperature Scanning Hall Probe Microscopy

Abstract

Bismuth nano-Hall sensors with dimensions similar to50 nm x 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 x 10(-4) Omega/G 9.1 kOmega and 0.8 G/ rootHz, respectively. A 50 nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.