Analysis and modeling of the self-heating effect in SiGe HBTs

Abstract

This paper investigates the self-heating effect in SiGe heterojunction bipolar transistors. A physical study leads to a nonlinear physical model describing static and dynamic self-heating mechanism. The implementation of this model using an electrical equivalent circuit is presented. Our approach is validated using measurements on devices from different technologies. System configuration, measurement, and calibration issues are presented.