Field‐effect transistor based on organosoluble germanium nanoclusters

Abstract

Abstract The structural and electrical properties of organosoluble germanium nanoclusters are studied. The organogermanium nanocluster (OGE) is a polygermane with a three‐dimensional σ‐conjugated chain. The OGE is prepared from GeCl 4 by a simple one‐pot reaction, where the germanium nanocluster is obtained by the reaction of GeCl 4 using magnesium metal and the capping reaction of the chlorine group by an alkyl Grignard reagent in tetrahydrofuran. The optical energy gap of the tert ‐butyl‐substituted OGE is lower than that of the n ‐propyl‐substituted OGE, corresponding to the higher molecular weight and the larger extent of the σ‐conjugation along the GeGe chain. The conductivity of the OGE is enhanced by heat treatment, which induces the elimination of organic substituents, the reconstruction of the GeGe chain, and the extension of a three‐dimensional germanium network among germanium clusters. The field‐effect transistor fabricated by a coating technique using the tert ‐butyl‐substituted OGE shows signal amplification properties. Copyright © 2005 John Wiley & Sons, Ltd.