Electrical and optical properties of SnEuTe and SnSrTe films

Abstract

The SnTe, Sn1−xEuxTe and Sn1−xSrxTe (x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019 cm−3 with high mobility exceeding 2000 cm2/V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1−xEuxTe and Sn1−xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.