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Study of Surface Treatment of Silicon Wafer Using Small Angle Incident X‐Ray Photoelectron Spectroscopy
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1999
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Materials ScienceSurface CharacterizationChemical EngineeringWafer Scale ProcessingEngineeringSurface AnalysisSurface ScienceApplied PhysicsMaterials CharacterizationHigh Sensitivity AnalysesSemiconductor Device FabricationSurface TreatmentIntegrated CircuitsSilicon SurfacesSilicon On InsulatorUltra Clean Technology
A small angle incident X‐ray photoelectron spectroscopy (XPS) instrument was developed to perform high sensitivity analyses on silicon surfaces by reducing background noise. Silicon surfaces were treated by a new wet cleaning process based on ultra clean technology. Cleaning effectiveness for this process was determined by small angle incident XPS measurements and spectra analyses. At each cleaning step, no elements other than silicon, oxygen, and carbon atoms were detected. The thickness of the film formed during each step was evaluated. Based on the relative and intensities, too much oxygen was found on the surface to attribute only to . © 1999 The Electrochemical Society. All rights reserved.