High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2000 · 972 citations

Engineering, Materials Engineering, Materials Science +17

Generalized scaling theory and its application to a ¼ micrometer MOSFET design

G. Baccarani, M.R. Wordeman, R.H. Dennard · IEEE Transactions on Electron Devices · 1984 · 439 citations

Engineering, Electrical Engineering, Electronic Materials +16

Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys

G. Lucovsky, G. B. Rayner · Applied Physics Letters · 2000 · 174 citations

Natural Sciences, Materials Science, Physics +17

Nanocrystallization and Phase Transformation in Monodispersed Ultrafine Zirconia Particles from Various Homogeneous Precipitation Methods

Michael Z. Hu, Rodney D. Hunt, E. Andrew Payzant et al. · Journal of the American Ceramic Society · 1999 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +17