Optical properties of InP nanowires on Si substrates with varied synthesis parameters

Abstract

We report the effect of synthesis parameters on the physical appearance and optical properties of InP nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. A strong dependence on the group V to III precursor ratio is observed on the NW shape and, consequently, its photoluminescence (PL). Narrow, uniform-diameter NWs are achieved with an optimized V/III ratio. The uniform NWs exhibit PL widths as low as 1.4meV. Their peak wavelength does not vary much with excitation, which is important for NW lasers on Si. These characteristics are attributed to the one-dimensional density of states in uniform-diameter NWs.