Lattice distortion near vacancies in diamond and silicon. I

Abstract

A dynamical relaxation procedure, coupled with a valence force potential, has been used to calculate the distortion around point defects in a diamond-type crystal. The method has been applied to the vacancy in diamond and silicon. The response of the lattice to symmetrized forces on the nearest neighbours to the vacancy was calculated. The results can be used in estimates of point defect properties which depend on lattice distortion, including the jahn-teller effect, and formation energies. The ratios of the atomic displacements under uniform external stresses for the perfect lattice and for the lattice with a vacancy are also determined.