GaAs MESFETs with a buried <i>p</i> -layer for large-scale integration

Abstract

A new GaAs MESFET structure with a buried p-layer that produces a uniform threshold voltage is proposed and realised using a Be ion implantation technique. These new FETs improve the uniformity of the threshold voltage to 5% from the previous 10% in HB Cr-doped GaAs crystal.