Electronics Letters · 1984 · 19 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingHigh-frequency Semiconductor DevicesIii-v SemiconductorsIntegrated Circuit DesignIon ImplantationSemiconductor Device MaterialsDopant ImplantationGaas Microwave Integrated CircuitsImplantation Through Thin FilmsIon Implantation EffectsP-type DopingThreshold VoltageThreshold Voltage ControlThreshold Voltage Extraction
A new GaAs MESFET structure with a buried p-layer that produces a uniform threshold voltage is proposed and realised using a Be ion implantation technique. These new FETs improve the uniformity of the threshold voltage to 5% from the previous 10% in HB Cr-doped GaAs crystal.
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