Transmission electron microscopy investigation of the morphology of InP Stranski–Krastanow islands grown by metalorganic chemical vapor deposition

Abstract

We have used transmission electron microscopy to determine the morphology of InP Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 °C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes defining the islands are of {001}, {110}, and {111} types. The base dimensions are 40–50 nm and 55–65 nm in the [1̄10] and [110] directions, respectively, and the height is 12–18 nm.