Applied Physics Letters · 2011 · 96 citations · 16 references
Natural SciencesMaterials SciencePhysicsMaterials CharacterizationOptical MaterialsThin FilmsElectron-phonon InteractionsOptical Properties Of SemiconductorsOptical Properties Of SolidsOptical Thin FilmsThin Film Optical PropertiesThin-film MaterialsAbsorption SpectraBand GapBand Gap EnergyMagnetron SputteringOptical AbsorptionOptical Absorption SpectraOptical PropertiesSputtering
Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.
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