Low bias short channel impurity mobility in graphene from first principles

Abstract

In theory, graphene should exhibit very high carrier mobility, however its measured mobility is usually much lower. This discrepancy between theory and empirical observations is believed to be due to disordered scattering. We present a systematic first principles study of diffusive impurity scattering in short channel graphene. We achieve good agreement with experimental data and show that mobility in graphene is strongly influenced by impurity scattering. In general, the results show that diffusive scattering can play a key role in determining the carrier transport properties of short channel devices.