Publication | Closed Access
Promising thermoelectric performance in n-type AgBiSe<sub>2</sub>: effect of aliovalent anion doping
143
Citations
31
References
2014
Year
EngineeringThermoelectricsSolid-state ChemistryThermal ConductivitySemiconductorsIi-vi SemiconductorMid-temperature ApplicationsQuantum MaterialsThermodynamicsAliovalent AnionMaterials EngineeringMaterials ScienceThermoelectric PerformanceHalide IonSemiconductor MaterialN-type CarrierTransition Metal ChalcogenidesApplied PhysicsCondensed Matter PhysicsThermoelectric Material
Halide ion (Cl<sup>−</sup>/Br<sup>−</sup>/I<sup>−</sup>) aliovalently dopes on the Se<sup>2−</sup>sublattice and contributes one n-type carrier in AgBiSe<sub>2</sub>, which gives rise to improved electronic transport properties. A peak<italic>ZT</italic>, value of ∼0.9 at ∼810 K has been achieved for the AgBiSe<sub>1.98</sub>Cl<sub>0.02</sub>sample, which makes it a promising n-type thermoelectric material for mid-temperature applications.
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