Optimization of ridge height for the fabrication of high performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation

Abstract

The dependence of the ridge height on the performance of the ridge waveguide (RWG) lasers has been systematically studied. It was found that the optimum ridge height corresponds to an etching depth where all the p-doped layers above the active region were removed. InGaAsN triple-quantum-well RWG lasers with optimized ridge height were fabricated with pulsed anodic oxidation. The lowest threshold current density (Jth) of 711A∕cm2 was obtained from a 10×1300μm2 InGaAsN RWG laser. The corresponding transparency current density (Jtr) of the fabricated InGaAsN RWG lasers was 438A∕cm2 (equivalent to 146A∕cm2 per well).