High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors

TLDR

The rectifier uses a Schottky‑gate‑controlled 2DEG channel between cathode and anode. Connecting the Schottky gate to the anode makes the forward turn‑on voltage set by the channel threshold rather than the Schottky barrier. The L‑FER achieves a 0.63 V turn‑on voltage at 100 A/cm², a 390 V reverse breakdown at 1 mA/mm, a 1.4 mΩ·cm² on‑resistance, and a figure of merit of 108 MW/cm², demonstrating low‑cost, high‑performance compatibility with AlGaN/GaN HEMTs for power integrated circuits.

Abstract

A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-FER) with low turn-on voltage is demonstrated using the same fabrication process as that for normally off AlGaN∕GaN HEMT, providing a low-cost solution for GaN power integrated circuits. The power rectifier features a Schottky-gate-controlled two-dimensional electron gas channel between the cathode and anode. By tying up the Schottky gate and anode together, the forward turn-on voltage of the rectifier is determined by the threshold voltage of the channel instead of the Schottky barrier. The L-FER with a drift length of 10μm features a forward turn-on voltage of 0.63V at a current density of 100A∕cm2. This device also exhibits a reverse breakdown voltage (BV) of 390V at a current level of 1mA∕mm and a specific on resistance (RON,sp) of 1.4mΩcm2, yielding a figure of merit (BV2∕RON,sp) of 108MW∕cm2. The excellent device performance, coupled with the lateral device structure and process compatibility with AlGaN∕GaN HEMT, make the proposed L-FER a promising candidate for GaN power integrated circuits.