Controllable Modification of SiC Nanowires Encapsulated in BN Nanotubes

Abstract

Semiconducting β-SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition (see Figure). An unusual feature—a gap of 10–15 nm in width between the inner wall of the BN tube and the SiC nanowire—allows various chemical and morphological modifications to be performed on the nanowires.