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GaN linear electro-optic effect
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1995
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Wide-bandgap SemiconductorPhotonicsElectrical EngineeringOptical MaterialsEngineeringPhysicsOptical PropertiesPiezoelectric EffectsSecond-harmonic Generation CoefficientsApplied PhysicsGan Power DeviceWurtzite GanCategoryiii-v SemiconductorOptoelectronicsNanophotonicsElectro-optics Device
Measurements of the linear (Pockels) electro-optical coefficient of wurtzite GaN are reported. The values for the electro-optic coefficients r33 and r31 are 1.91±0.35 and 0.57±0.11 pm/V at 633 nm, respectively, in agreement with extrapolations from measured second-harmonic generation coefficients (χ33(2)=−20±6 pm/V and χ31(2)=10±3 pm/V) suggesting that the dominant contributions are electronic in origin. Measurements were performed using a Mach–Zehnder interferometer with LiNbO3 as a reference material. Piezoelectric effects were also observed.