Applied Physics Letters · 1995 · 59 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOpticsOptoelectronicsElectro-optic EffectsElectro-optic MaterialsInterferometryOptical Properties Of SemiconductorsSemiconductor PhysicsWide-bandgap SemiconductorsElectro-optic CoefficientsGallium NitrideGallium Nitride (Gan) MaterialsHarmonic GenerationMach-zehnder InterferometersPiezoelectric CoefficientsSecond-harmonic GenerationSemiconductor Characterization
Measurements of the linear (Pockels) electro-optical coefficient of wurtzite GaN are reported. The values for the electro-optic coefficients r33 and r31 are 1.91±0.35 and 0.57±0.11 pm/V at 633 nm, respectively, in agreement with extrapolations from measured second-harmonic generation coefficients (χ33(2)=−20±6 pm/V and χ31(2)=10±3 pm/V) suggesting that the dominant contributions are electronic in origin. Measurements were performed using a Mach–Zehnder interferometer with LiNbO3 as a reference material. Piezoelectric effects were also observed.