Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO <sub>2</sub> /Pb(Zr <sub>0.52</sub> Ti <sub>0.48</sub> )O <sub>3</sub> Heterostructures

Charles Ahn, Jean‐Marc Triscone, Nicholas Peter Archibald, M. Decroux, R. H. Hammond, T. H. Geballe, Ø. Fischer, M. R. Beasley

Science · 1995 · 106 citations · 11 references

Concepts

Abstract

A ferroelectric field effect in epitaxial thin film SrCuO(2)/Pb(Zr(0.52)Ti(0.48))O(3) heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO(2) layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr(0.52)Ti(0.48))O(3) layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO(2) and Pb(Zr(0.52)Ti(0.48))O(3). This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO(2).

References

11