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Probing valence band structure in wurtzite InP nanowires using excitation spectroscopy
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Citations
21
References
2010
Year
Time-resolved Photoluminescence SpectroscopyEngineeringWurtzite Inp NanowiresExcitation SpectroscopySemiconductor NanostructuresIi-vi SemiconductorNanoelectronicsNanoscale SciencePhotoluminescence Excitation SpectroscopyMaterials SciencePhotoluminescencePhysicsSemiconductor MaterialQuantum ChemistryExcitation EnergyNatural SciencesApplied PhysicsCondensed Matter PhysicsValence Band Structure
We use time-resolved photoluminescence spectroscopy and photoluminescence excitation spectroscopy to measure the valence band parameters of hexagonal wurtzite InP nanowires. The A exciton emission and excitation energy is observed at 1.504 eV as expected. Excitation spectra show that the B and C hole bands are 30 and 161 meV above the A hole band. From these measurements, we obtain the crystal field and spin-orbit energies of 52 meV and 139 meV, respectively.
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