High field temperature dependent electron drift velocities in GaAs

Abstract

Electron drift velocities in (100) GaAs have been measured at various temperatures from 95 to 385 K for electric field strengths from about 15 to 160 kV/cm at most temperatures and as high as 236 kV/cm at 300 K using a microwave time-of-flight technique. The velocity decreases monotonically with increasing electric field strength at all temperatures over the entire field range investigated.