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Crystallographic characterization of tetragonal (Pb,La)TiO3 epitaxial thin films grown by pulsed laser deposition
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Citations
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References
1995
Year
Materials ScienceCrystallographic CharacterizationMaterial AnalysisEngineeringEpitaxial GrowthCrystalline DefectsCrystal Growth TechnologyApplied PhysicsPulsed Laser DepositionEpitaxial Thin FilmsThin FilmsSrtio3 SubstrateMolecular Beam EpitaxyCrystallographyPlt FilmsMicrostructureThin Film Processing
Crystallographic properties such as lattice constants, degree of c-axis orientation, and c/a ratio of tetragonal Pb1−xLaxTiO3 (PLT, x=0–0.28) epitaxial thin films grown by pulsed laser deposition on single-crystal substrates such as MgO(001) and SrTiO3(001) were evaluated. General x-ray-diffraction techniques—θ-2θ scan and Φ scan—were used to confirm the epitaxial relations between films and substrates. The epitaxial relations were PLT(001) or (100)//substrate (001) and PLT[100] or [001]//substrate[100]. Then, using the {303} asymmetric rocking curve technique, more quantitative crystallographic informations of PLT films could be obtained. The c/a ratio and lattice constant along the a axis of c-axis-oriented PLT tetragonal unit cell were calculated from the peak location of {303} rocking curve, which is slightly different from that of the powder or bulk PLT. The existence of a-axis-oriented domains was also verified in PLT films grown on SrTiO3 substrate by {303} rocking curve. The origin of the observed ferroelectric domain structures is discussed based on transformation and thermal strains involved in the film preparation.
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