Influence of polar substituents on the epitaxy of oligothiophenes on graphite: A systematic STM investigation

Abstract

The variation of substituents of oligothiophenes can be used to control the epitaxy of the materials through systematic modification of intermolecular interactions. The STM characterization of new oligothiophenes (e.g. see Figure) is reported and is shown to provide useful structural information on the supramolecular assemblies which have potential in molecular optical and electronic applications. magnified image