Band offsets at the epitaxial SrTiO₃/SrZrO₃ (0 0 1) heterojunction

Abstract

Abstract The interface formation between SrTiO 3 and SrZrO 3 has been studied using in situ photoelectron spectroscopy. Epitaxial SrZrO 3 thin films were grown on (0 0 1)-oriented SrTiO 3 : Nb single crystals via pulsed-laser deposition. The epitaxial SrZrO 3 growth was verified via x-ray diffraction and Cs-corrected high angle annular dark field scanning transmission electron microscopy. A type I straddling configuration has been found for the interface analysed with a valence band and conduction band offset of 0.5 eV and 1.9 eV, respectively.