Gallium nitride nanowires with a metal initiated metal‐organic chemical vapor deposition (MOCVD) approach

Abstract

Abstract We have studied structural and electrical properties of one dimensionally grown single crystalline gallium nitride (GaN) nanowires (NWs) for nanoscale devices using a metal‐initiated metal‐organic chemical vapor deposition (MOCVD). GaN nanowires were formed via the vapor‐liquid‐solid (VLS) mechanism with gold, iron, or nickel as growth initiators and were found to have triangular cross‐sections with widths of 15 ∼ 200 nm and lengths of 5 ∼ 20 μm. TEM confirmed that the nanowires were single crystalline and were well oriented along the [210] or [110] direction on substrate depending on the metal initiators. For electrical transport properties of un‐doped GaN nanowires, the back‐gated field effect transistors (FET) were also fabricated by standard e‐beam lithography. In our electrical measurement, the carrier concentration and mobility were ≈2 ∼ 4 × 10 18 cm –3 and 60 ∼ 70 cm 2 /V s, respectively. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)