Ion bombardment and implantation

Abstract

The scope and importance of ion bombardment studies has in recent years been considerably extended by the realization that the surface properties of materials, and in particular the semiconductors, may be usefully modified by means of the implantation of suitable ions in the form of an accelerated beam. Whereas earlier studies of radiation damage and sputtering were confined mostly to low ion energies, interest has now grown in the behaviour at higher energies, up to the Mev region. Often the bombarded specimens are crystalline, and the so-called channelling phenomenon is important in determining the range distribution of implanted material and the degree of lattice disruption created.