Ohmic Contacts to Silicon Carbide

Abstract

We have studied a number of metal alloys in a search for improved ohmic contacts to SiC. A Cu–Ti eutectic alloy wets SiC at 880°C forming a shallow contact which is ohmic on p-type SiC. An Al–Si eutectic wets SiC at 900° to 1000°C giving a contact which is ohmic on p-type SiC; the penetration is 300 to 500 Å.