Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2012 · 19 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesOptical Communication SystemsOptical InterconnectsPhotodetectorsQuantum Well DevicesSemiconductor Device MaterialsCryogenic CoolingCryogenic Cooling SystemsCryogenic EngineeringHigh-speed OperationHigh-speed PhotodetectionHigh-speed TransmissionHigh-temperature Device OperationPhotodiodes
We report on the development of 850-nm high-speed VCSELs optimized for low-power data transmission at cryogenic temperatures near 100 K. These VCSELs operate on the n=1 quantum well transition at cryogenic temperatures (near 100 K) and on the n=2 transition at room temperature (near 300 K) such that cryogenic cooling is not required for initial testing of the optical interconnects at room temperature. Relative to previous work at 950 nm, the shorter 850-nm wavelength of these VCSELs makes them compatible with high-speed receivers that employ GaAs photodiodes.