Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin films

Abstract

Controlling the wafer temperatures from 200 to 500 °C at H2/WF6 flow ratio equal to 24, low-resistive (about 11 μΩ cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.