Measurement of Lattice Temperature of Silicon during Pulsed Laser Annealing

Abstract

A classical time-of-flight method was used to determine the temperature of evaporated Si atoms and thus the lattice temperature of Si during pulsed laser annealing. The resulting temperatures between 1200 and 3000 K for energy densities between 1.0 and 2.5 J/${\mathrm{cm}}^{2}$ clearly support a strictly thermal annealing model including melting of the surface region of Si.