Journal of Applied Physics · 1986 · 127 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceRecombinationSemiconductor MaterialsThin FilmsDislocations In SemiconductorsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSemiconductor PhysicsSolar CellsDislocation DensityDislocation DynamicsDislocation NetworksDislocation PhysicsRecombination CentersRecombination LossesSolar Cell Device PhysicsThin-film Solar Cells
Recombination loss at dislocations is the predominant loss mechanism in thin-film GaAs solar cells on Si substrates. Cell parameters are calculated based on a simple model in which dislocations act as recombination centers. Excellent agreement is observed between theory and experiment. It is indicated that one could fabricate thin-film GaAs solar cells with an efficiency of 17–18% on Si substrates if the dislocation density is less than 5×105 cm−2.
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