The effect of hydrogen content on the optoelectronic properties of amorphous silicon-carbide films

Abstract

The optoelectronic properties of rf sputtered hydrogenated amorphous silicon-carbide thin films were investigated by optical and infrared absorption, photoconductivity, photoluminescence (PL), and electron spin resonance studies as a function of the hydrogen content. The results show that the hydrogen content has a very significant effect on the optical band gap and the photoconductivity of these films. The increased intensity of the PL spectra with an increase in the hydrogen content is very well correlated with the corresponding decrease in the spin density.