Largely tunable midinfrared (8–12 μm) difference frequency generation in isotropic semiconductors

Abstract

Largely tunable midinfrared (8–12 μm) generation is obtained in GaAs and ZnSe slabs by difference frequency mixing of optical parametric oscillator output waves (∼2 μm). The coherence lengths determined in semiconductor wedges are in excellent agreement with estimates from known Sellmeir formulas.