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Properties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: The influence of the finite well width
56
Citations
14
References
1989
Year
SemiconductorsWide-bandgap SemiconductorElectrical EngineeringPlasma ElectronicsEngineeringPhotoluminescencePhysicsCategoryquantum ElectronicsWidth WApplied PhysicsQuantum MaterialsQuantum WellsElectron-hole PlasmaSingle-plasmon Pole ApproximationOptoelectronicsCompound SemiconductorNanophotonics
Photoluminescence spectra of the electron-hole plasma confined in GaAs-(Ga,Al)As quantum wells are presented. The spectra have been successfully fitted using a single-plasmon pole approximation. The results clearly show that the band-gap reduction \ensuremath{\Delta}${E}_{g}$(w) depends on the width w of the well and is smaller than in a strictly two-dimensional plasma. Further, theoretical estimations of \ensuremath{\Delta}${E}_{g}$(w) are in good agreement with our experimental results.
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