Third-harmonic generation in InAs/GaAs self-assembled quantum dots

Abstract

We have observed third-harmonic generation associated with intraband transitions in semiconductor quantum dots. The frequency tripling $(12\mathrm{}\mathrm{\ensuremath{\mu}}\stackrel{\ensuremath{\rightarrow}}{m}4\mathrm{}\mathrm{\ensuremath{\mu}}\mathrm{m})$ occurs in the valence band of InAs/GaAs self-assembled quantum dots. We show that the third-harmonic generation is enhanced due to the achievement of the double resonance condition between intraband transitions. A third-order nonlinear susceptibility $|{\ensuremath{\chi}}_{3\ensuremath{\omega}}^{(3)}|$ as large as $1.5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}14}(\mathrm{m}/\mathrm{V}{)}^{2}$ is measured for one dot plane.