Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7×7

Abstract

We discuss the results of the scanning tunneling microscopy (STM) investigations and ab initio calculations of the structure and stability of the quasicubic Bi{012} film formed in the initial stage of the bismuth deposition on the Si(111)-7×7 surface at room temperature. Results of our STM experiments show that paired-layer Bi{012} film grows on top of the initially formed wetting layer, with the Si 7×7 lattice preserved underneath. The pairing of the layers in the {012} film leads to the substantial stabilization of the film when it consists of an even number of layers and only even-number layered Bi{012} islands are observed to be stable. The buckling of the atoms in the topmost paired layer induced by the relaxation of the film is evidenced by the high-resolution STM images.