Applied Physics Letters · 1987 · 20 citations · 11 references
EngineeringElectrical EngineeringOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignLaser DiodesSemiconductor Device MaterialsSemiconductor LasersSemiconductor PhysicsBandwidthCapacitanceHigh-power Semiconductor LasersHigh-speed OperationLasersModulation BandwidthParasitic CapacitancePower Output
The fabrication and performance of high-speed and high-power 1.3-μm InGaAsP buried crescent lasers with semi-insulating current blocking layers are reported. A modulation bandwidth of 11 GHz and acw output power of 42 mW/facet have been achieved. An approximate circuit model of the semi-insulating buried crescent laser, which describes the effect of dc bias on parasitic capacitance at high-speed operation, is also presented.
11
InGaAsP laser with semi-insulating current confining layers
Niloy K. Dutta, J. L. Zilko, T. Cella et al. · Applied Physics Letters · 1986 · 27 citations